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PD - 2.397A
10BQ040
SCHOTTKY RECTIFIER 1 Amp
Major Ratings and Characteristics
Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5s sine VF @ 1.0Apk, T J = 125C TJ 10BQ040 1.0 Units A
Description / Features
The 10BQ040 surface-mount Schottky rectifier has been designed for applications requiring very low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging and reverse battery protection. * Small footprint, surface mountable * Very low forward voltage drop * High frequency operation * Guard ring for enhanced ruggedness and long-term reliability
40 430 0.49
V A V
-55 to 150
C
SMB
CASE STYLE CASE OUTLINE
267
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10BQ040
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
10BQ040
40
Absolute Maximum Ratings
Parameters
IF(AV) IFSM EAS IAR Max. Average Forward Current See Fig. 5 Max. Peak One Cycle Non - Repetitive Surge Current -- see Fig. 7 Non - Repetitive Avalanche Energy Repetitive Avalanche Current 430 45 18 0.2 mJ A A 5s Sine or 3s Rect. pulse 10ms Sine 0r 6ms Rect. pulse Following any rated load condition and with rated VRRM applied.
10BQ Units Conditions
1.0 A 50% duty cycle @ TC = 112C, rectangular waveform
T J = 25C, IAS = 0.2A, L = 13mH Current decaying linearly to zero in 1sec Frequency limited by TJ max. VA = 1.5 X VR typical
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop See Fig. 1
10BQ
0.53 0.70 0.49 0.64
Units
V V V V mA mA pF nH V/s @ 1.0A @ 2.0A @ 1.0A @ 2.0A T J = 25C T J = 125C
Conditions
T J = 25C
T J = 125C VR = rated VR
IRM CT LS dv/dt
Max. Reverse Leakage Current See Fig. 2 Max. Junction Capacitance Typical Series Inductance Max. Voltage Rate of Change (Rated VR)
0.10 4.0 80 2.0 5,300
VR = 5VDC, (test signal range 100KHz to 1MHz) 25C Measured lead to lead 5mm from package body
Thermal-Mechanical Specifications
Parameters
TJ T STG Max.Junction Temperature Range Max. Storage Temperature Range to Ambient RthJL wt Max. Thermal Resistance, Junction to Lead Approximate Weight Case Style Pulse Width < 300s, Duty Cycle < 2%
Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
10BQ
-55 to 100 -55 to 100 140 36 0.10 SMB
Units
C C C/W C/W g
Conditions
RthJA Max. Thermal Resistance, Junction
DC operation -- See Fig. 4 DC operation
Similar to DO-214AA
268
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10BQ040
10
10
TJ = 150C
Reverse current - IR (ma)
1
125C 100C
0.1
75C 50C
0.01
0.001
25C
0.0001
1
0
10
20
30
40
Fig. 2 Typical Values of Reverse Current Vs. Reverse Voltage
TJ = 125C TJ = 25C
Reverse Voltage - V (V)R
1000
TJ= 25C 100
0.1 0.2 0.4 0.6 0.8 (V) FM 1.0 Forward Voltage Drop - V
Fig. 1 Max. Forward Voltage Drop Characteristics
10 0 10 20 30 40 Reverse Voltage - V (V) R
Fig. 3 Typical Junction CapacitanceVs. Reverse Voltage
100
D = 0.50 D = 0.33 10 D = 0.25 D = 0.17 D = 0.08 1 Single Pulse (Thermal Resistance) 0.1 0.00001
PDM
t
1
t2 Notes: 1. Duty factor D = t / t 2. Peak T = P J xZ DM
1
2 +T thJC C
0.0001
0.001
0.01
0.1
1
10
100
Fig. 4
t , Rectangular Pulse Duration (Seconds) 1 Max. Thermal Impedance ZthJL Characteristics
269
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10BQ040
150 10BQ040 R thJL (DC) = 36C/W 140 1.0 D = 0.08 D = 0.17 0.8 D = 0.25 D = 0.33 D = 0.50 0.6
DC RMS Limit
130
DC 0.4
120
110
0.2
100 0 0.4 0.8 1.2 1.6 (A) F(AV) 2 Average Forward Current - I
0.0 0.0 0.4 0.8 1.2 (A) F(AV) 1.6 Average Forward Current - I
Fig. 5 Max. Allowable Case Temperature Vs. Average Forward Current
Fig. 6 Forward Power Loss Characteristics
1000
L H IG H -S P E E D S W IT C H
BRD
D UT
100
C U RR E NT M O N IT O R
R g = 2 5 oh m
F R E E -W H E E L D IO D E 4 0H FL 40 S 0 2
+
V d = 25 V o lt
At Any Rated Load Condition And With Rated V RRM Applied Following Surge 10 1 10 100 1000 Square Wave Pulse Duration - t (microsec) p 10000
Fig.7 Max. Non-Repetitive Surge Current
Fig. 8 Unclamped Inductive Test Circuit
Refer to the Appendix Section for the following: Appendix D: Tape and Reel Information -- See page 338. 270
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